Optimized process for electron beam nanolithography using AZPN114 chemically amplified resist-Reference-Cited by-同舟云学术

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Optimized process for electron beam nanolithography using AZPN114 chemically amplified resist

Published:1997-02 Issue:1-4 Volume:35 Page:145-148
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Cui Z.,Moody R.A.,Loader I.M.,Watson J.G.,Prewett P.D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference3 articles.

1. High resolution studies on Hoechst AZ PN114 chemically amplified resist

2. Advances in Resist Technology and processing;Eckes;SPIE 1466,1991

3. BBN Software Products,1992

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron Beam Lithography;Nanofabrication;2024

2. Response surface methodology applied to silicon trench etching in Cl2/HBr/O2 using transformer coupled plasma technique;Solid-State Electronics;2002-06

3. A simple new method for the investigation of process latitude in E-beam lithography with positive resists;Microelectronic Engineering;2000-06

4. Comparative study of AZPN114 and SAL601 chemically amplified resists for electron beam nanolithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-11

5. Electron Beam Lithography;Micro-Nanofabrication

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