Gap filling with PVD processes for copper metallized integrated circuits-Reference-Cited by-同舟云学术

Gap filling with PVD processes for copper metallized integrated circuits

Published:1997-01 Issue:1-4 Volume:33 Page:31-38
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Wenzel Christian,Urbansky Norbert,Klimes Wolfgang,Siemroth Peter,Schülke Thomas

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Directional and preferential sputtering-based physical vapor deposition

2. Proc. Advanced Metallization for ULSI Applications;Paranjpe,1995

3. Proc. 41st National Symp. of the AVS;Motegi,1994

4. Proc. Advanced Metallization for ULSI Applications;Hamamoto,1995

5. Proc. Advanced Metallization for ULSI Applications;Cale,1995

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