1. An examination of the product-catalyzed reaction of trimethylgallium with arsine
2. Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation Dependence
3. 3. S. H. Li and G. B. Stringfellow unpublished results.
4. Elementary processes and rate-limiting factors in MOVPE of GaAs
5. 5. D. E. Aspnes, R. Bhat, E. Colas, L. T. Florez, J. P. Harbison, M. K. Kelly, V. G. Keramidas, M. A. Koza, and A. A. Studna Inst. Phys. Conf. Ser. (Inst. of Physics, London). Paper presented at 1988 Symposium on GaAs and Related Compounds, Atlanta, September, 1988, to be published.