High-Dose Implantation
Author:
Publisher
Elsevier
Reference82 articles.
1. Determination of the complex refractive index profiles in P+31 ion implanted silicon by ellipsometry
2. The design philosophy for a 200 kV industrial high current ion implanter
3. Effect of irradiation temperature on Si amorphization process
4. A new model to explain the colours generated on the surface of ion implanted silicon wafers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Ion Implanters;Ion Implantation: Basics to Device Fabrication;1995
2. Extended defect removal in silicon by rapid thermal annealing;Il Nuovo Cimento D;1990-12
3. Ion Implantation;Microelectronic Materials and Processes;1989
4. Influence of the Implanted Species on the Residual Damage After Hot Implants in Silicon;MRS Proceedings;1988
5. Damage created by high-current-density implants of phosphorus into ?100? and ?111? silicon wafers;Applied Physics A Solids and Surfaces;1987-11
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