Influence of the Ar8+ and O6+ ion implantation on the recombination parameters of p and n type implanted Si samples investigated by means of the photothermal infrared radiometry-Reference-Cited by-同舟云学术

Influence of the Ar8+ and O6+ ion implantation on the recombination parameters of p and n type implanted Si samples investigated by means of the photothermal infrared radiometry

Published:2014-03 Issue: Volume:63 Page:6-9
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Pawlak M.,Maliński M.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

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4. Noncontact measurement of transport properties of long-bulk-carrier-lifetime Si wafers using photothermal radiometry;Salnick;Appl. Phys. Lett.,1996

5. Computational aspects of laser radiometric multiparameter fit for carrier transport property measurements in Si wafers;Rodriguez;J. Electrochem. Soc.,2000

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