Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate

Author:

Michalczewski K.,Kubiszyn Ł.,Martyniuk P.,Wu C.H.,Jureńczyk J.,Grodecki K.,Benyahia D.,Rogalski A.,Piotrowski J.

Funder

The Polish National Research and Development Centre

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Antimonide-based infrared detectors;Rogalski,2018

2. Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors;Huang;J. Cryst. Growth.,2011

3. InAs/GaSb type-II superlattice infrared detectors: future prospect;Rogalski;App. Phys. Rev.,2017

4. Evaluation of antimony segregation in InAs/InAs1-xSbx type-II superlattices grown bymolecular beam epitaxy;Lu;J. Appl. Phys.,2016

5. Effect of antimony segregation on the electronic properties of InAs/InAsSb superlattices;Haugan;Proc. SPIE,2017

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1. Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice;Applied Physics Letters;2024-06-17

2. Trap levels analysis in MWIR InAs/InAsSb T2SL photodiode;Materials Science and Engineering: B;2024-02

3. InAs/InAsSb superlattice infrared detectors;Opto-Electronics Review;2024-01-03

4. High-speed long-wave infrared ultra-thin photodetectors;APL Photonics;2024-01-01

5. Antimony-based Type-II superlattice infrared detectors: An overview;Reference Module in Materials Science and Materials Engineering;2024

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