Effect of material parameters on the open-circuit voltage in a GaInAsSb thermophotovoltaic cell-Reference-Cited by-同舟云学术

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Effect of material parameters on the open-circuit voltage in a GaInAsSb thermophotovoltaic cell

Published:2010-01 Issue:1 Volume:53 Page:37-42
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Peng Xincun,Guo Xin,Zhang Baolin,Li Xiangping,Zhao Xiaowei,Dong Xin,Zheng Wei,Du Guotong

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Thermophotovoltaic and photovoltaic conversion at high-flux densities;Coutts;IEEE Trans. Electron. Dev.,1999

2. Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs;Baldasaro;J. Appl. Phys.,2001

3. GaSb-related materials for TPV cells;Mauk;Semicond. Sci. Technol.,2003

4. Antimonide-based III–V thermophotovoltaic devices;Wang;AIP Conf. Proc.,2004

5. 0.52eV quaternary InGaAsSb thermophotovoltaic diode technology;Dashiell;AIP Conf. Proc.,2004

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modulating infrared optoelectronic performance of GaInAsSb p-n junction by nanophotonic structure;Acta Physica Sinica;2021

2. Simulation of temperature-dependent material parameters and device performances for GaInAsSb thermophotovoltaic cell;Infrared Physics & Technology;2011-11

3. Design of selective emitting media within a cylindrical tube for conversion of wasted heat energy to electrical energy;Journal of Applied Physics;2011-01

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