Measurements of the optical absorption coefficient of Ar 8+ ion implanted silicon layers using the photothermal radiometry and the modulated free carrier absorption methods-Reference-Cited by-同舟云学术

Measurements of the optical absorption coefficient of Ar 8+ ion implanted silicon layers using the photothermal radiometry and the modulated free carrier absorption methods

Published:2014-11 Issue: Volume:67 Page:604-608
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Chrobak Ł.,Maliński M.,Pawlak M.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

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3. Minority carrier recombination lifetimes in n-type CdMgSe mixed crystals measured by means of the photothermal infrared radiometry;Pawlak;Opto-Electron. Rev.,2014

4. Radiometric analysis of laser modulated IR properties of semiconductors;Dietzel;Int. J. Thermophys.,2003

5. Accuracy analysis for the determination of electronic transport properties of Si wafers using modulated free carrier absorption;Zhang;J. Appl. Phys.,2008

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