Photoluminescence of silicon carbonitride thin films: The interdependence of post-deposition annealing and growth temperature-Reference-Cited by-同舟云学术

Photoluminescence of silicon carbonitride thin films: The interdependence of post-deposition annealing and growth temperature

Published:2019-10 Issue: Volume:214 Page:116563
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Khatami Zahra,Mascher Peter

Funder

Natural Sciences and Engineering Research Council of Canada

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference23 articles.

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2. Annealing of silicon carbonitride nanostructured thin films: interdependency of hydrogen content, optical, and structural properties;Khatami;J. Mater. Sci.,2018

3. ECR plasma deposited a-SiCN:H as insulating layer in piezoceramic modules;Peter;Vacuum,2018

4. Composition and optical properties tunability of hydrogenated silicon carbonitride thin films deposited by reactive magnetron sputtering;Bachar;Appl. Surf. Sci.,2018

5. Characterization of low-dielectric constant silicon carbonitride ( SiCN ) dielectric films for charge trapping nonvolatile memories;Rashel;ECS J. Solid State Sci. Technol.,2015

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1. Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture;Coatings;2023-01-30

2. An effect of hydrogenation on the photoemission of amorphous SiCN films;International Journal of Hydrogen Energy;2022-02

3. Novel photoluminescent In2O3/a-SiC core/shell nanostructure synthesized by HW-assisted PECVD method;The European Physical Journal Plus;2021-03

4. The influence of NH3 flow rate on the microstructure and oxidation properties of a-Si-C-N:H films prepared by PECVD technology;Applied Surface Science;2020-05