Different degradation behaviors of InGaN/GaN MQWs blue and violet LEDs-Reference-Cited by-同舟云学术

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Different degradation behaviors of InGaN/GaN MQWs blue and violet LEDs

Published:2009-12 Issue:12 Volume:129 Page:1981-1984
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Huang Liubing,Yu Tongjun,Chen Zhizhong,Qin Zhixin,Yang Zhijian,Zhang Guoyi

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference14 articles.

1. Degradation of GaN-based quantum well light-emitting diodes

2. Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes

3. Optical power degradation mechanisms in AlGaN-based 280nm deep ultraviolet light-emitting diodes on sapphire

4. A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes

5. Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

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1. Investigation of degradation mechanism in GaN-based blue and ultraviolet laser diodes;Journal of Applied Physics;2023-09-01

2. Effect of environment on white packaged LED reliability;Reliability and Failure Analysis of High-Power LED Packaging;2023

3. Reliability Analysis of AlGaN-Based Deep UV-LEDs;Nanomaterials;2022-10-24

4. Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors;Applied Physics Letters;2020-05-18

5. An explanation for catastrophic failures of GaN-based vertical structure LEDs subjected to thermoelectric stressing;Journal of Physics D: Applied Physics;2015-07-02

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