Effect of GaAs spacer layer thickness on optical properties of multi-stacked InAs/GaAs quantum dots-Reference-Cited by-同舟云学术

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Effect of GaAs spacer layer thickness on optical properties of multi-stacked InAs/GaAs quantum dots

Published:2016-07 Issue: Volume:175 Page:16-20
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Mohanta Antaryami,Jang Der-Jun,Wang Fu-Yu,Wang J.S.

Funder

Ministry of Science and Technology of the Republic of China

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference32 articles.

1. Optical Gain and Stimulated Emission in Nanocrystal Quantum Dots

2. Exciton-exciton scattering in vapor phase ZnO nanoparticles

3. Electrically injected InGaAs/GaAs quantum-dot microcavity light-emitting diode operating at 1.3 μm and grown by metalorganic chemical vapor deposition

4. Quantum dot infrared photodetectors

5. Spectroscopy of Quantum Levels in Charge-Tunable InGaAs Quantum Dots

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anomalous photoluminescence of InAs surface quantum dots: intensity enhancement and strain control by underlying quantum dots;Nanotechnology;2022-07-25

2. Structural and Optical Characteristics of InAs QDs Stacked on GaAs Substrate by Molecular Beam Epitaxy;Materials Today: Proceedings;2019

3. Carrier recombination dynamics in electronically coupled multi-layer InAs/GaAs quantum dots;Journal of Luminescence;2018-03

4. Quantum dots for bioimaging and therapeutic applications;Nanostructures for Novel Therapy;2017

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