Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects-Reference-Cited by-同舟云学术

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Published:2011-09 Issue:9 Volume:131 Page:1908-1912
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Zhang Min,Shi Jun-jie

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference37 articles.

1. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

2. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

3. When group-III nitrides go infrared: New properties and perspectives

4. Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots

5. Exciton states and interband optical transitions in InGaN quantum dots

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of lateral growth of self-assembled GaN microdisks on UV lasing action;Nano Research;2023-07-18

2. Characteristic comparison between GaN layer grown on c-plane cone shape patterned sapphire substrate and planar c-plane sapphire substrate by HVPE;Journal of Crystal Growth;2018-07

3. Optical properties of serrated GaN nanowires;Optical Materials Express;2014-06-13

4. DONOR BOUND EXCITONS CONFINED IN WURTZITE InGaN/GaN QUANTUM DOT NANOWIRE HETEROSTRUCTURES;International Journal of Modern Physics B;2013-12

5. Quantum size effect on the luminous properties of excitonic states in a quasi-one-dimensional wurtzite GaN nanowire: Two-parameter variational approach;Current Applied Physics;2013-08