Interconnection of a thermodynamical model for point defect parameters in solids with the dynamical theory of diffusion
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference59 articles.
1. Effect of tin on point defects and oxygen precipitation in Czochralski silicon: Experimental and theoretical studies
2. Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method
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4. Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si
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