SiC enhanced nucleation of diamond under high pressure and high temperature-Reference-Cited by-同舟云学术

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SiC enhanced nucleation of diamond under high pressure and high temperature

Published:1996-08 Issue:10 Volume:5 Page:1214-1217
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Choi Jun-Youp,Park Jong-Ku,Eun K.Y.,Kang Suk-Joong L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Preparation of Diamond

2. Crystallization of Diamond and Graphite

3. Diamond growth rates

4. Catalytic Effects in the Transformation of Graphite to Diamond

5. Variation with pressure of the nickel-carbon eutectic

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization on the occurrence state of nitrogen getter Ti in HPHT grown synthetic diamond crystals;Journal of Crystal Growth;2023-11

2. Nucleation and growth of diamond on titanium silicon carbide by microwave plasma-enhanced chemical vapor deposition;Journal of Crystal Growth;2006-09

3. Effect of carbon crystallinity on the nucleation and growth of diamond under high pressure and high temperature;Diamond and Related Materials;1998-08

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