Analysis using high energy beam techniques of the surface carbonaceous layers of silicon and tantalum substrates used in the chemical vapour deposition synthesis of diamond-Reference-Cited by-同舟云学术

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Analysis using high energy beam techniques of the surface carbonaceous layers of silicon and tantalum substrates used in the chemical vapour deposition synthesis of diamond

Published:1993-08 Issue:10 Volume:2 Page:1365-1369
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Terranova M.L.,Sessa V.,Rigato V.,Caccavale F.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Nucleation of diamond on silicon, SiAlON, and graphite substrates coated with an a‐C:H layer

2. Characterization of thermal plasma CVD diamond coatings and the intermediate SiC phase

3. Backscattering Speztrometry;Chu,1978

4. Non-Rutherford scattering of protons by light elements

5. Depth profiling of light elements in materials with high‐energy ion beams

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural investigation of the titanium/diamond film interface;Journal of Applied Physics;1996-09-15

2. Silicon contamination of diamond films deposited on silicon substrates in fused silica based reactors;Journal of Applied Physics;1996-03-15

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