Optical Studies of Femtosecond Carrier Thermalization in GaAs-Reference-Cited by-同舟云学术

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Optical Studies of Femtosecond Carrier Thermalization in GaAs

Published:1992 Issue: Volume: Page:313-344
ISSN:
Container-title:Hot Carriers in Semiconductor Nanostructures
language:
Short-container-title:

Author:

Knox Wayne H.

Publisher

Elsevier

Reference49 articles.

1. E. O. Göbel, in “Festkorperprobleme”, Advances in Solid State Physics, Vol. 30, (1990): J. Shah, “Physics of the 2-D Electron Gas” (Proc. NATO Advanced Study Institute, 1989).

2. Spectroscopy of hot carriers in semiconductors

3. The temperature and energy distribution of photoexcited hot electrons

4. Generation of optical pulses shorter than 0.1 psec by colliding pulse mode locking

5. Femtosecond white-light continuum pulses

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical properties of microcavity polaritons;Phase Transitions;1999-02

2. Initial Relaxation of Photoexcited Carriers;Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures;1999

3. Role of Carrier–Phonon Interaction on the Exciton Formation in Quantum Wells;physica status solidi (b);1997-11

4. Photoluminescence and Carrier Dynamics in GaAs Quantum Wells;physica status solidi (a);1997-11

5. Initial Relaxation of Photoexcited Carriers;Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures;1996

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