Advances in oxide-based conductive bridge memory (CBRAM) technology for computing systems-Reference-Cited by-同舟云学术

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Advances in oxide-based conductive bridge memory (CBRAM) technology for computing systems

Published:2019 Issue: Volume: Page:321-364
ISSN:
Container-title:Advances in Non-Volatile Memory and Storage Technology
language:
Short-container-title:

Author:

Molas Gabriel,Harrand Michel,Nail Cécile,Blaise Philippe

Publisher

Elsevier

Reference54 articles.

1. Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations;Nail,2016

2. 10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation;Govoreanu,2011

3. Experimental and theoretical understanding of forming, SET and RESET operations in conductive bridge RAM (CBRAM) for memory stack optimization;Guy,2014

4. IEDM 2011 Tech. Dig;Baek,2011

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Memristors and Resistive Switching in Metal Oxides;Optical Properties of Metal Oxide Nanostructures;2023

2. Xbar-Partitioning: A Practical Way for Parasitics and Noise Tolerance in Analog IMC Circuits;IEEE Journal on Emerging and Selected Topics in Circuits and Systems;2022-12

3. Interconnect Parasitics and Partitioning in Fully-Analog In-Memory Computing Architectures;2022 IEEE International Symposium on Circuits and Systems (ISCAS);2022-05-28

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