Effect of high-k and vacuum dielectrics as gate stack on a junctionless cylindrical surrounding gate (JL-CSG) MOSFET-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effect of high-k and vacuum dielectrics as gate stack on a junctionless cylindrical surrounding gate (JL-CSG) MOSFET

Published:2016-09 Issue: Volume:123 Page:26-32
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Sharma Aniruddh,Jain Arushi,Pratap Yogesh,Gupta R.S.

Funder

Defense Research Development Organization

University Grant Commission (UGC), Govt. of India

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. A guide to short-channel effects in MOSFETs;Duvvury;IEEE Circ Dev Mag,1986

2. Simulation of sub-0.1-μm MOSFET’s with completely suppressed short-channel effect;Tanaka;IEEE Electron Dev Lett,1993

3. Corner and short-channel effects in recessed channel dopant segregated Schottky barrier MOSFETs;Hsia,2012

4. Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current;Koh;IEEE Trans Electron Dev,2000

5. Nanowire transistors without junctions;Colinge;Nat Nano,2010

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Interface Trap Charges on Silicon Carbide (4H-SiC) Based Gate – Stack, Dual Metal, Surrounding Gate, FET (4H-SiC- GSDM-SGFET) for Analog and Noise Performance Analysis for 5 G/LTE Applications;ECS Journal of Solid State Science and Technology;2024-07-01

2. Small Signal Parameters Extraction and RF Performance of GaN-Based Dual-Metal Cylindrical Surrounding Gate Junctionless Accumulation-Mode (DM-CSG-JAM) MOSFET;IETE Journal of Research;2024-06-18

3. Assessment of BTI‐induced deterioration in vacuum based undoped structure;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-03

4. A pathway to improve short channel effects of junctionless based FET’s after incorporating technology boosters: a review;Engineering Research Express;2024-02-26

5. Quantum and classical simulation of core shell based junctionless field effect transistor with digital application;Engineering Research Express;2024-01-25

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3