Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET

Author:

Cathignol Augustin,Bordez Samuel,Cros Antoine,Rochereau Krysten,Ghibaudo Gérard

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Liu W et al. Modeling of pocket implanted MOSFETs for anomalous analog behavior. International electron devices meeting 1999, Technical digest; 1999. p. 171–4.

2. Chatterjee A. Transistor design issues in integrating analog functions with high performance digital CMOS. In: 1999 Symposium on VLSI technology. Digest of technical papers; 1999. p. 147–8.

3. Difrenza R et al. Dependence of channel width and length on MOSFET matching for 0.18μm CMOS technology. In: ESSDERC 2000. Proceedings of the 30th European solid-state device research conference; 2000. p. 584–7.

4. Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs;Roy;IEEE Trans Electron Dev,2006

5. Tanaka T. Vth fluctuation induced by statistical variation of pocket dopant profile. International electron devices meeting 2000, Technical digest, IEDM; 2000. p. 271–4.

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