Effect of gate-length shortening on the terahertz small-signal and self-oscillations characteristics of field-effect transistors-Reference-Cited by-同舟云学术

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Effect of gate-length shortening on the terahertz small-signal and self-oscillations characteristics of field-effect transistors

Published:2015-12 Issue: Volume:114 Page:141-147
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Starikov E.,Shiktorov P.,Gružinskis V.,Marinchio H.,Palermo C.,Varani L.

Funder

Lithuanian Science Council

TeraLab-Montpellier

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. A comparative investigation on sub-micrometer InN and GaN Gunn diodes working at terahertz frequency

2. Searching for THz Gunn oscillations in GaN planar nanodiodes

3. Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes

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