Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. RF equivalent-circuit analysis of p-type diamond field-effect transistors with hydrogen surface termination;Kasu;IEICE Trans Electron,2008
2. AlGaN/GaN HEMT with 300-GHz fmax;Chung;IEEE Electron Dev Lett,2010
3. A 10-mW submillimeter-wave solid-state power-amplifier module;Radisic;IEEE Trans Microwave Theory Tech,2010
4. Analysis of nonlinear microwave circuits based on Schottky-gate field effect transistors (in Russian);Garber;Electron Eng Ser 2,1984
5. Numerical modeling of the characteristics of nonlinear equivalent circuits for s.h.f. Schottky-gate GaAs field-effect transistors;Garber;Soviet Microelectron,1991
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献