Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters

Author:

Tsamados Dimitrios,Singh Chauhan Yogesh,Eggimann Christoph,Akarvardar Kerem,Philip Wong H.-S.,Mihai Ionescu Adrian

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Suspended-gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor;Abele,2005

2. 3D design and analysis of functional NEMS-gate MOSFETs and SETs;Pruvost;IEEE Trans Nanotechnol,2007

3. A new nano-electro-mechanical field effect transistor (NEMFET) design for low-power electronics;Kam,2005

4. Colinet E, Durand C, Audebert P, Renaux P, Mercier D, Duraffourg L, et al. Measurement of nano displacement based on in-plane suspended gate MOSFET detection compatible with front-end CMOS process. In: IEEE international conference on solid-state circuits (ISSCC); 2008. p. 332–3.

5. Principles of space-charge based bi-stable MEMS: the junction-MEMS;Sallese;Sens Actuator A: Phys,2007

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