Effect of AlN buffer thickness on stress relaxation in GaN layer on Si (111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
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2. Growth of single crystalline GaN film on Si substrate using 3C–SiC as an intermediate layer;Takeuchi;J Crystal Growth,1991
3. Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates;Perkins;Mater Res Soc Symp Proc,1996
4. Lattice-matched HfN buffer layers for epitaxy of GaN on Si;Armtage;Appl Phys Lett,2002
5. Thermal stability of GaN on (111) Si substrate;Ishikawa;J Crystal Growth,1998
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2. Stress investigation of the AlGaN/GaN micromachined circular diaphragms of a pressure sensor;Journal of Micromechanics and Microengineering;2014-12-05
3. Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer;CrystEngComm;2014-07-01
4. The Origin of Shape, Orientation, and Structure of Spontaneously Formed Wurtzite GaN Nanorods on Cubic Si(001) Surface;Crystal Growth & Design;2013-04-26
5. Effect of Graded Al$_{x}$Ga$_{1-x}$N Layers on the Properties of GaN Grown on Patterned Si Substrates;Japanese Journal of Applied Physics;2012-02-03
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