Modeling the DC gain of 4H–SiC bipolar transistors as a function of surface recombination velocity-Reference-Cited by-同舟云学术

Modeling the DC gain of 4H–SiC bipolar transistors as a function of surface recombination velocity

Published:2005-04 Issue:4 Volume:49 Page:663-666
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Fardi H.Z.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Perez-Wurfl I, Konstantinov A, Torvik J, Van Zeghbroeck B. RF 4H–SiC Bipolar Transistors, In: Proceedings of the LesterEastman Conference, 6–8 August 2002, Newark, DE

2. Perez-Wurfl I, Torvik J, Van Zeghbroeck B. 4H–SiC RF Bipolar Junction Transistors, In: Proceedings DRC, 23–25 June 2003, Salt Lake City, UT. p. 27–8

3. 4H–SiC bipolar junction transistor with high current and power density;Perez-Wurfl;Solid State Electron,2003

4. Pinto MR, Rafferty CS, Dutton RW. PISCES II: Poisson and Continuity Equation Solver, Integrated Circuits laboratory, EE Department, Stanford University, 1984

5. Danialsson E, Processing and electrical characterization of GaN/SiC heterojunctions and SiC bipolar transistors, ISRN KTH/EKT/FR-01/1-SE, KTH, Royal Institute of Technology, Stockholm, 2001

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of base carrier lifetime on the characteristics of 4H-SiC BJTs;Superlattices and Microstructures;2017-02

2. Sensing Performance Study of SiC, a Wide Bandgap Semiconductor Material Platform for Surface Plasmon Resonance Sensor;Journal of Sensors;2015

3. Effects of base doping and carrier lifetime on differential current gain and temperature coefficient of 4H-SiC power bipolar junction transistors;International Journal of Electronics;2012-04

4. The influence of interface states on the current gain of 4H-SiC bipolar transistors;2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC);2009-12

5. Modeling dc gain performance of 4H‐SiC BJTs;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;2007-11-13