Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach-Reference-Cited by-同舟云学术

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Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach

Published:2022-06 Issue: Volume:192 Page:108295
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Pilotto A.,Khakbaz P.,Palestri P.,Esseni D.

Funder

Governo Italiano Ministero dell'Istruzione dell'Università e della Ricerca

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Strain-induced modulation of electron mobility in single-layer transition metal dichalcogenides MX2 (M = Mo, W; X = S, Se);Hosseini;IEEE Trans Electron Devices,2015

2. Design, fabrication and control of soft robots;Rus;Nature,2015

3. Pursuing prosthetic electronic skin;Chortos;Nat Mater,2016

4. Large temperature coefficient of resistance in atomically thin two-dimensional semiconductors;Khan;Appl Phys Lett,2020

5. Inkjet-printed Graphene electronics;Torrisi;ACS Nano,2012

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1. Phonon-limited transport in two-dimensional materials: A unified approach for ab initio mobility and current calculations;Physical Review Applied;2024-05-08

2. Monte Carlo study of carrier transport in two-dimensional transition metal dichalcogenides: high-field characteristics and MOSFET simulation;Journal of Computational Electronics;2023-07-06

3. Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors;Micromachines;2023-06-12

4. Terahertz conductivity of monolayer MoS$$_2$$;Journal of Computational Electronics;2023-03-21

5. Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening;2D Materials;2023-02-01

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