A highly-compact packaging design for improving the thermal performance of multi-finger InGaP/GaAs collector-up HBTs-Reference-Cited by-同舟云学术

A highly-compact packaging design for improving the thermal performance of multi-finger InGaP/GaAs collector-up HBTs

Published:2011-02 Issue:1 Volume:56 Page:85-88
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Tseng Hsien-Cheng,Chen Jhin-Yuan

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Application of GaInP/GaAs DHBT’s to power amplifiers for wireless communications;Chen;IEEE Trans Microwave Theory Tech,1999

2. Megahed M, Egomepe E, Ayvazian M, Glasbrener M. Design considerations for single package radio TM (SPR) solution for EGSM/DCS dual band cellular phones. IEEE MTT-S Int Microwave Symp 2003:1707-10.

3. Heterostructure bipolar transistors and integrated circuits;Kroemer;Proc IEEE,1982

4. Stenzel R, Würfl J, Richter E, Pigorsch C, Klix W. Simulation of influence of heat removal on power gains of heterojunction bipolar transistor. In: 22nd Workshop on compound semiconductor devices and integrated circuits; 2008. p. 53–4.

5. Thermal performance of collector-up HBTs for small high-power amplifiers with a novel thermal via structure underneath the HBT fingers;Osone;IEEE Trans Compon Packag Technol,2005

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal performance of nanoscale InGaP/GaAs collector-up heterojunction bipolar transistors investigated by the advanced optimization technique;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2013-06-10

2. Enhanced Thermal Performance of InGaP/GaAs Collector-Up HBTs With a Miniaturized Backside Heat-Dissipation Structure;IEEE Transactions on Components, Packaging and Manufacturing Technology;2012-12