GaN schottky barrier MOSFET using transparent source/drain electrodes for UV-optoelectronic integration-Reference-Cited by-同舟云学术

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GaN schottky barrier MOSFET using transparent source/drain electrodes for UV-optoelectronic integration

Published:2012-07 Issue: Volume:73 Page:78-80
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Jung Byung-Kwon,Lee Chang-Ju,Kim Tae-Hyeon,Kim Dong-Seok,Lee Myoung-Bok,Lee Jung-Hee,Hahm Sung-Ho

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. High UV/visible rejection contrast AlGaN/GaN MIS photodetectors

2. A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si

3. Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates

4. Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation

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1. Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors;Communications Engineering;2024-01-19

2. Multi-dimensional spatial light communication made with on-chip InGaN photonic integration;Optical Materials;2017-04

3. The modification of electrical properties of Au/n-Hg3In2Te6 Schottky contact by the introduction of ITO interlayer;Current Applied Physics;2016-06

4. Temperature dependent dielectric function and the E0 critical points of hexagonal GaN from 30 to 690 K;AIP Advances;2014-02

5. Dielectric function and energy of the E 0 critical point of hexagonal GaN at 26 K studied by using spectroscopic ellipsometry;Journal of the Korean Physical Society;2012-09

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