Off-state avalanche-breakdown-induced on-resistance degradation in SGO

Off-state avalanche-breakdown-induced on-resistance degradation in SGO–NLDMOS

Published:2013-03 Issue: Volume:81 Page:27-31
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zhang Shifeng,Han Yan,Ding Koubao,Hu Jiaxian,Zhang Bin,Zhang Wei,Wu Huanting

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

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3. Shekar MS, Williams RK, Cornell M, Luo M.-Y, Darwish M. Hot electron degradation and unclamped inductive switching in submicron 60-V lateral DMOS. In: Proc int rel phys symp; 1998. p. 383–90.

4. Hot hole degradation effects in lateral nDMOS transistors;Moens;IEEE Trans Elec Dev,2004

5. An investigation on anomalous hot-carrier-induced on-resistance reduction in n-type LDMOS transistors;Chen;IEEE Trans Dev Mater Rel,2009

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