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High quality silicon-based substrates for microwave and millimeter wave passive circuits

  • Published:2017-09 Issue: Volume:135 Page:78-84
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Belaroussi Y.,Rack M.,Saadi A.A.,Scheen G.,Belaroussi M.T.,Trabelsi M.,Raskin J.-P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. FinFET and UTBB for RF SOI communication systems;Raskin;Solid-State Electr,2016

2. Progress in RF inductors on silicon—Understanding substrate losses;Burghartz;IEEE IEDM,1998

3. RF performance of a commercial SOI technology transferred onto a passivated HR silicon substrate;Lederer;IEEE Trans Electron Dev,2008

4. Surface-passivated high-resistivity silicon substrates for RFICs;Rong;IEEE Electron Dev Lett,2004

5. Behavior of TFMS and CPW line on SOI substrate versus high temperature for RF applications;Si Moussa;Solid-State Electr,2006

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