Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge-Reference-Cited by-同舟云学术

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Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

Published:2021-09 Issue: Volume:183 Page:108113
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

García Héctor,Vinuesa Guillermo,Ossorio Óscar G.,Sahelices Benjamín,Castán Helena,Dueñas Salvador,González Mireia B.,Campabadal Francesca

Funder

Ministerio de Economía y Competitividad

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Resistive switching materials for information processing

2. The future of electronics based on memristive systems

3. Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

4. Pathways to efficient neuromorphic computing with non-volatile memory technologies

5. Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO 2 -based RRAM devices for artificial neuron and synapse elements

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1. Structural phase transition and resistive switching properties of Cu_xO films during post-thermal annealing;Nanotechnology;2024-02-12

2. An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices;Chaos, Solitons & Fractals;2022-07

3. Assessment of the Morphological, Optical, and Photoluminescence Properties of HfO₂ Nanoparticles Synthesized by a Sol–Gel Method Assisted by Microwave Irradiation;Inorganic Chemistry;2022-04-19

4. Review on role of nanoscale HfO2 switching material in resistive random access memory device;Emergent Materials;2022-02-28

5. Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition;Materials;2022-01-24

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