Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Linearity and intermodulation distortion analysis of single and dual metal gate junctionless transistor;Heliyon;2024-06
2. Analytical Model for Cylindrical Junctionless Nanowire FETs;2024 IEEE 15th Latin America Symposium on Circuits and Systems (LASCAS);2024-02-27
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