Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB;Keller;IEEE Trans Electron Dev,2001
2. Application of GaN-based heterojunction FETs for advanced wireless communication;Ohno;IEEE Trans Electron Dev,2001
3. Hashizume T, Ootomo S, Hasegawa H. Al2O3-based surface passivation and insulated gate structure for AlGaN/GaN HFETs. Phys Status Solidi C 2003;0:2380–4.
4. Park K-Y et al. Fabrication of AlGaN/GaN MIS-HFET using an Al2O3 high k dielectric. Phys Status Solidi C 2003;0:2351–4.
5. AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation;Mehandru;Appl Phys Lett,2003
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