Multibias and thermal behavior of microwave GaN and GaAs based HEMTs

Author:

Alim Mohammad A.,Rezazadeh Ali A.,Gaquiere Christophe

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. RF transistors: recent developments and roadmap toward terahertz applications;Schwierz;Solid-State Electron,2007

2. Metamorphic GaAs HEMTs with fT of 200GHz;Edgar;Electron Lett,1999

3. On the reliability of accelerated testing in AlGaAs/InGaAs/GaAs PHEMTs;Yarn;Act Passive Electron Compon,2002

4. Thermal characterisation of AlGaN/GaN HEMT on silicon carbide substrate for high frequency application;Alim,2014

5. Temperature dependent small-signal model parameters analysis of AlGaAs/InGaAs pHEMTs in multilayer 3D MMIC technology;Tan,2010

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3. Electrostatic, linearity and analogue/RF performance analysis of single heterojunction GaAs HEMT;Journal of Materials Science: Materials in Electronics;2024-01

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