Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As–In0.40Al0.60As–InP HEMT MMIC technology-Reference-Cited by-同舟云学术

Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As–In0.40Al0.60As–InP HEMT MMIC technology

Published:2006-05 Issue:5 Volume:50 Page:858-864
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Malmkvist Mikael,Mellberg Anders,Rorsman Niklas,Zirath Herbert,Grahn Jan

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

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2. Beyond G-band: A 235GHz InP MMIC amplifier;Dawson;IEEE Microwave Wireless Comp Lett,2005

3. Chou YC, Leung D, Lai R, Grundbacher R, Barsky M, Kan Q, et al. 0.1μm InGaAs/InAlAs/InP HEMT MMICs—a flight qualified technology. In: GaAs IC symp dig, 2002. p.77–80.

4. Reliability investigation of 0.07-μm InGaAs–InAlAs–InP HEMT MMICs with pseudomorphic In0.75Ga0.25As channel;Chou;IEEE Electron Dev Lett,2003

5. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors;Nguyen;IEEE Trans Electron Dev,1992

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