1. A novel high-breakdown-voltage SOI MESFET by modified charge distribution;Aminbeidokhti;IEEE Trans Electron Device,2012
2. A trench isolated thick SOI process as platform for various electrical and optical integrated devices;Lerner,2013
3. Device design of partial-SOI SJ-LDMOS with n type charge islands;Tang,2013
4. Radiation effects in advanced SOI devices: new insights into total ionizing dose and double-event effects;Gaillardin,2013
5. New concept for improving characteristics of high-voltage power devices by buried layers modulation effect;Duan,2006