Effect of oxygen content of the LaAlO 3 layer on the synaptic behavior of Pt/LaAlO 3 /Nb-doped SrTiO 3 memristors for neuromorphic applications-Reference-Cited by-同舟云学术

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Effect of oxygen content of the LaAlO 3 layer on the synaptic behavior of Pt/LaAlO 3 /Nb-doped SrTiO 3 memristors for neuromorphic applications

Published:2018-02 Issue: Volume:140 Page:139-143
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Jang Jun Tae,Ko Daehyun,Ahn Geumho,Yu Hye Ri,Jung Haesun,Kim Yeon Soo,Yoon Chansoo,Lee Sangik,Park Bae Ho,Choi Sung-Jin,Kim Dong Myong,Kim Dae Hwan

Funder

Korean Government (MSIP)

Ministry of Science, ICT and Future Planning

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface;Ohtomo;Nature,2004

2. Electric field control of the LaAlO3/SrTiO3 interface ground state;Caviglia;Nature Lett,2008

3. Structure-property relation of SrTiO3/LaAlO3 interfaces;Huijbe;Adv Mater,2009

4. Built-in and induced polarization across LaAlO3/SrTiO3 heterojunctions;Singh-Bhalla;Nature Phys,2011

5. Effect of oxygen vacancies in the SrTiO3 substrate on the electrical properties of the LaAlO3/SrTiO3 interface;Kalabukhov;Phys Rev B,2011

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