High ESD reliability InGaN light emitting diodes with post deposition annealing treated ZnO films-Reference-Cited by-同舟云学术

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High ESD reliability InGaN light emitting diodes with post deposition annealing treated ZnO films

Published:2012-11 Issue: Volume:77 Page:77-81
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chang Liann-Be,Chang Yuan-Shun,Jeng Ming-Jer,Liu Kou-Chen,Yang Jui-Fu,Kuo Shou-Yi,Wu Kuo-Hong

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Formation process of high reflective Ni∕Ag∕Au Ohmic contact for GaN flip-chip light-emitting diodes

2. Improved ESD properties by combining GaN-based light-emitting diode with MOS capacitor

3. Thermally-driven motion of current filaments in ESD protection devices

4. Vertical chip of GaN-based blue light-emitting diode

5. ESD protection device design using statistical methods

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2. A Screen Method for the Mass-Production of the Small-Size and Side-View LED Package;Crystals;2018-08-31

3. Latent Semantic Distance Between Chinese Basic Words and Non-basic Words;Lecture Notes in Computer Science;2014

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