A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. A continuous, analytic drain-current model for DG MOSFETs;Taur;IEEE Electron Dev Lett,2004
2. A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism;Sallese;Solid-State Electron,2005
3. Double-gate silicon-on-insulator transistor with volume inversion: a new device with greatly enhanced performance;Balestra;IEEE Electron Dev Lett,1987
4. Double-gate CMOS: symmetrical- versus asymmetrical-gate devices;Kim;IEEE Trans Electron Dev,2001
5. Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFET;Taur;IEEE Trans Electron Dev,2001
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