Author:
Balasekaran Sundararajan,Endo Kazuomi,Tanabe Tadao,Oyama Yutaka
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. High frequency properties of the avalanching negative resistance diode;Nishizawa;Sci Rep Res Inst Tohoku Univ B-(Comm),1958
2. Okabe T, Takamiya S, Okamoto K, Nishizawa J. Bulk oscillation by tunnel injection, Tohoku Univ., Sendai, Japan, RIEC Tech Rep 1968; TR-31.
3. Bulk oscillation by tunnel injection;Okabe;IEDM Tech Dig,1968
4. Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapor pressure;Nishizawa;J Cryst Growth,1975
5. GaAs TUNNETT diodes;Nishizawa;IEEE Trans Microwave Theory Tech,1978
Cited by
13 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献