A band-modulation device in advanced FDSOI technology: Sharp switching characteristics

Author:

El Dirani Hassan,Solaro Yohann,Fonteneau Pascal,Legrand Charles-Alex,Marin-Cudraz David,Golanski Dominique,Ferrari Philippe,Cristoloveanu Sorin

Funder

European Project WayToGoFast

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. A systematic study of the sharp-switching Z2-FET device: from mechanism to modeling and compact memory applications;Wan;Solid State Electron.,2013

2. 14nm FDSOI technology for high speed and energy efficient applications;Weber,2014

3. 28nm FDSOI technology platform for high-speed low-voltage digital applications;Planes;Dig. Tech. Pap. – Symp. VLSI Technol. (VLSIT),2012

4. Planar Fully Depleted SOI technology: a powerful architecture for the 20nm node and beyond;Faynot,2010

5. A 16nm FinFET CMOS technology for mobile SoC and computing applications;Wu;Int. Electron Dev. Meet.,2013

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