1. Nanoionics-based resistive switching memories;Waser;Nat Mater,2007
2. Memristive switching mechanism for metal/oxide/metal nanodevices;Yang;Nat Nanotechnol,2008
3. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures;Lee;Nat Mater,2011
4. 2-stack 1D-1R cross-point structure with oxide diodes as switch elements for high density resistance RAM applications;Lee;Proc IEEE Int Electron Dev Meet,2007
5. Yoon HS, Baek IG, Zhao J, Sim H, Park MY, Lee H, et al. Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications. In: Proc Symp VLSI Tech Dig; 2009. p. 26–7.