Author:
Takemura R.,Kawahara T.,Ono K.,Miura K.,Matsuoka H.,Ohno H.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Long retention-time high-speed DRAM array with 12-F2 twin cell for sub 1-V operation, the institute of electronics, in-formation and communication engineers;Takemura;Trans Electron,2007
2. A novel nonvolatile memory with spin torque transfer magnetization switching: Spin-RAM;Hosomi;Int Electron Dev Meet (IEDM),2005
3. 2Mb SPRAM (SPin-Transfer Torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read;Kawahara;IEEE J Solid-State Circuits,2008
4. Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM;Kishi;Int Electron Dev Meet (IEDM),2008
5. A disturbance-free read scheme and a compact stochastic-spin-dynamics-based MTJ circuit model for Gb-scale SPRAM;Ono;IEEE Int Electron Dev Meet (IEDM),2009
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献