CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In0.53Ga0.47As n-MOSFETs-Reference-Cited by-同舟云学术

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CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In0.53Ga0.47As n-MOSFETs

Published:2012-12 Issue: Volume:78 Page:62-67
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ivana ,Kong Eugene Y.-J.,Subramanian Sujith,Zhou Qian,Pan Jisheng,Yeo Yee-Chia

Funder

National Research Foundation Singapore

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Effects of (NH4)2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors

2. Analysis of Electron Mobility in Inversion-Mode $ \hbox{Al}_{2}\hbox{O}_{3}/\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ MOSFETs

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metallic Nanoalloys on Vertical GaAs Nanowires: Growth Mechanisms and Shape Control of Ni-GaAs Compounds;ACS Applied Materials & Interfaces;2023-12-20

2. Microstructural and phase evolutions of Pt contact to N-type In0.53Ga0.47As driven by rapid thermal annealing and its correlation with specific contact resistivity;Intermetallics;2021-06

3. Critical role of thulium metal interlayer in ultra-low contact resistance reduction in Ni-InGaAs/n-InGaAs for n-MOSFETs;Vacuum;2019-08

4. Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs;IEEE Journal of the Electron Devices Society;2019

5. Reducing Contact Resistance Between Ni-InGaAs and n-In0.53Ga0.47As using Sn Interlayer in n-In0.53Ga0.47As MOSFETs;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2018-06-30

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