A novel scaling theory for fully depleted pi-gate (ΠG) MOSFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Scaling theory for double-gate MOSFET’s;Suzuki;IEEE Trans Electron Dev,1993
2. A novel scaling theory for fully-depleted, multiple-gate MOSFET, including effective number of gates (ENG);Chiang;IEEE Trans Electron Dev,2014
3. Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET’s;Auth;IEEE Electron Dev Lett,1997
4. Pi-gate SOI MOSFET;Park;IEEE Electron Dev Lett,2001
5. Colinge J-P. FinFET and other multi-gate transistors. Springer Science+Business Media LLC; 2008.
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1. Comparison of current-voltage characteristics for the nanoscale organofunctional silane such as OTS and HMDS based semiconductor channel for Pi-gate FinFET;AIP Conference Proceedings;2024
2. Junctionless Multiple-Gate (JLMG) MOSFETs: A Unified Subthreshold Current Model to Assess Noise Margin of Subthreshold Logic Gate;IEEE Transactions on Electron Devices;2021-10
3. The Enhancement of Electrical Characteristics of Tunneling Field-Effect Transistors with the Buried Cylindrical Gate;Journal of Nanoscience and Nanotechnology;2017-06-01
4. A New Quasi-3-D Compact Threshold Voltage Model for Pi-Gate (ΠG) MOSFETs With the Interface Trapped Charges;IEEE Transactions on Nanotechnology;2015-05
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