Author:
Sallese Jean-Michel,Krummenacher François,Prégaldiny Fabien,Lallement Christophe,Roy A.,Enz C.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs;Taur;IEEE Trans Electron Dev,2001
2. A continuous, analytic drain-current model for DG MOSFETs;Taur;IEEE Electron Dev Lett,2004
3. Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs;Ge;IEEE Trans. Electron Dev,2002
4. A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects;Baccarani;IEEE Trans. Electron Dev,1999
5. Enz C, Bucher M, Porret AS, Sallese J-M, Krummenacher F. The foundations of the EKV MOS transistor charge-based model, Workshop on Compact Modeling (WCM). In: Int Conf Modeling and Simulation of Microsystems, San Juan, Puerto Rico, April 2002. p. 666–9. Available from: http://legwww.epfl.ch/ekv/
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