Author:
Theodorou C.G.,Ioannidis E.G.,Haendler S.,Josse E.,Dimitriadis C.A.,Ghibaudo G.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Design considerations for CMOS near the limits of scaling;Frank;Solid State Electron,2002
2. Semiconductor surface physics;Mc Whorter,1957
3. Takeuchi K, Nagumo T, Yokogawa S, Imai K, Hayashi Y. Single-charge-based modeling of transistor characteristics fluctuations based on statistical measurement of RTN amplitude. In: 2009 symposium on VLSI technology digest of Technical papers. p. 54–5.
4. Low frequency noise and random telegraph signals in 0.35 μm silicon CMOS devices;Roux dit Buisson;Microelectron Eng,1993
5. On the variability of the front-/back-channel LF noise in UTBOX SOI nMOSFETs;dos Santos;IEEE Trans Electron Devices,2013
Cited by
14 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献