Integration techniques of pHEMTs and planar Gunn diodes on GaAs substrates-Reference-Cited by-同舟云学术

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Integration techniques of pHEMTs and planar Gunn diodes on GaAs substrates

Published:2014-12 Issue: Volume:102 Page:87-92
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Papageorgiou Vasileios,Khalid Ata,Li Chong,Steer Matthew J.,Cumming David R.S.

Funder

UK EPSRC

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. A planar Gunn diode operating above 100GHz;Khalid;IEEE Electron Dev Lett,2007

2. Enhancement of power and frequency in HEMT-like planar Gunn diodes by introducing extra delta-doping layers;Li;Microwave Opt Compon Lett,2011

3. Design, fabrication and characterisation of In0.23Ga0.77 as-channel planar Gunn diodes for millimeter wave applications;Li;Solid State Electron,2011

4. Cumming, planar Gunn diodes operating at a fundamental frequency of 164GHz;Khalid;IEEE Electron Dev Lett,2013

5. Highly integrated 60GHz transmitter and receiver in a GaAs pHEMT technology;Gunnarsson;IEEE J Solid-State Circ,2005

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes;Semiconductor Science and Technology;2020-09-24

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