Subband structure and effective mass of relaxed and strained Ge (110) PMOSFETs

Author:

Hsieh Bing-Fong,Chang Shu-Tong

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors;Ghani;IEDM Tech Dig,2003

2. Integration of germanium-on-insulator and silicon MOSFETs on a silicon substrate;Feng;IEEE Electr Dev Lett,2006

3. Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers;Zhang;J Appl Phys,2009

4. Subband structure, mobility of two dimensional holes in strained Si/SiGe MOSFET’s;Oberhuber;Phys Rev B,1998

5. Self-consistent calculation of electron and hole inversion charges at silicon–silicon dioxide interfaces;Moglestue;J Appl Phys,1986

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