Impact of intrinsic parameter fluctuations on the performance of HEMTs studied with a 3D parallel drift-diffusion simulator-Reference-Cited by-同舟云学术

Impact of intrinsic parameter fluctuations on the performance of HEMTs studied with a 3D parallel drift-diffusion simulator

Published:2007-03 Issue:3 Volume:51 Page:481-488
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Seoane N.,García-Loureiro A.J.,Kalna K.,Asenov A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultrahigh fT of 562GHz;Yamashita;IEEE Electron Device Lett,2002

2. 547-GHz fT In0.7Ga0.3As–In0.52Al0.48As HEMTs with reduced source and drain resistance;Shinohara;IEEE Electron Device Lett,2004

3. Kalna K, Elgaid K, Thayne I, Asenov A. Modelling of InP HEMTs with high indium content channels. In: Marsh J, Thayne I, editors. Proceedings of the indium phosphide and related materials conference (IPRM), Glasgow, 2005. p. 61–65.

4. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1μm MOSFETs: a 3D ‘atomistic’ simulation study;Asenov;IEEE Trans Electron Dev,1998

5. Frank DJ, Taur Y, Ieong M, Wong PH-S. Monte Carlo modelling of threshold variation due to dopant fluctuations. In: 1999 Symp VLSI Technol Dig Tech Papers. 1999. p. 169–70.

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