Low frequency noise in multi-gate SOI CMOS devices-Reference-Cited by-同舟云学术

Low frequency noise in multi-gate SOI CMOS devices

Published:2007-02 Issue:2 Volume:51 Page:292-298
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zafari Leily,Jomaah Jalal,Ghibaudo Gérard

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Ultimately thin double-gate SOI MOSFETs;Ernst;IEEE Trans Electron Dev,2003

2. Comprehensive study on low-frequency noise characteristics in surface channel SOI MOSFETs and Device Design Optimization for RF ICs;Tseng;IEEE Trans Electron Dev,2001

3. Determination of Si–SiO2 interface trap density by 1/f noise measurements;Celik-Butler;IEEE TED,1988

4. Chroboczek JA, Piantino G. Patent No. 15075, France. Registered in November 1999.

5. Semiconductor Surface Physics;McWhorter,1957

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultra-Scaled Si Nanowire Biosensors for Single DNA Molecule Detection;Sensors;2023-06-07

2. Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs;Noise in Nanoscale Semiconductor Devices;2020

3. Top-Bottom Gate Coupling Effect on Low Frequency Noise in a Schottky Junction Gated Silicon Nanowire Field-Effect Transistor;IEEE Journal of the Electron Devices Society;2019

4. High-Frequency and Noise Models in BSIM-IMG;Industry Standard FDSOI Compact Model BSIM-IMG for IC Design;2019

5. Impact of processing and back-gate biasing conditions on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs;Solid-State Electronics;2015-03